NTE2525 데이터 시트보기 (PDF) - NTE Electronics

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NTE2525

Silicon Complementary Transistors High Current Switch

NTE Electronics 

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Collector–Emitter Saturation Voltage

VCE(sat)

NTE2524

IC = 4A, IB = 200mA

–

NTE2525

–

Base–Emitter Saturation Voltage

VBE(sat) IC = 4A, IB = 200mA

–

Collector–Base Breakdown Voltage

V(BR)CBO IC = 10µA, IE = 0

60

Collector–Emitter Breakdown Voltage

V(BR)CEO IC = 1mA, RBE = ∞

50

Emitter–Base Breakdown Voltage

V(BR)EBO IE = 10µA, IC = 0

6

Turn–On Time

Storage Time

NTE2524

NTE2525

ton VCC = 25V, VBE = –5V,

–

tstg

10IB1 = –10IB2 = IC = 4A,

Pulse Width = 20µs,

Duty Cycle ≤ 1%, Note 1

–

–

Fall Time

tf

Typ

200

250

0.95

–

–

–

50

500

450

20

Max Unit

400 mV

500 mV

1.2 V

–V

–V

–V

– ns

– ns

– ns

ns

Note 1. For NTE2525, the polarity is reversed.

.256 (6.5)

.197 (5.0)

.090 (2.3)

.059 (1.5)

.275

(7.0)

BCE

.295

(7.5)

.090 (2.3)

.002 (0.5)

.002(0.5)

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