NTE2996 데이터 시트보기 (PDF) - NTE Electronics

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NTE2996

MOSFET N−Channel, Enhancement Mode High Speed Switch

NTE Electronics 

NTE2996

MOSFET

N−Channel, Enhancement Mode

High Speed Switch

Features:

D Ultra Low On−Resistance

D Dynamic dv/dt Rating

D +175°C Operating Temperature

D Fast Switching

D Fully Avalanche Rated

Absolute Maximum Ratings:

Drain Current, ID

Continuous (VGS = 10V)

TC = +25°C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84A

TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59A

Pulsed (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 330A

Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200W

Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4W/°C

Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

Single Pulsed Avalanche Energy (IAS = 50A, L = 260µH, Note 3), EAS . . . . . . . . . . . . . . . . . 320mJ

Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A

Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17mJ

Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V/ns

Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55° to +175°C

Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C

Maximum Thermal Resistance:

Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.75°C/W

Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62°C/W

Typical Thermal Resistance, Case−to−Sink (Flat, greased surface), RthCS . . . . . . . . . . . . 0.50°C/W

Note 1. Calculated continuous current based on maximum allowable junction temperature. Package

limitation current is 75A.

Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.

Note 3. This is a calculated value limited to TJ = +175°C.

Note 4. ISD ≤ 50A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C.

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