PBSS3515E,115 데이터 시트보기 (PDF) - Philips Electronics
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PBSS3515E,115 Datasheet PDF : 11 Pages
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Philips Semiconductors
PBSS3515E
15 V, 0.5 A PNP low VCEsat (BISS) transistor
−1.3
VBEsat
(V)
−0.9
(1)
(2)
(3)
−0.5
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102
RCEsat
(Ω)
10
1
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(1)
(2)
(3)
−0.1
−10−1
−1
−10
−102
−103
IC (mA)
10−1
−10−1
−1
−10
−102
−103
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. Base-emitter saturation voltage as a function of
collector current; typical values
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 8. Collector-emitter saturation resistance as a
function of collector current; typical values
−1.2
IC
(A)
−0.8
−0.4
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IB = 10 mA
9
8
7
6
5
4
3
2
1
103
RCEsat
(Ω)
102
(1)
10
(2)
(3)
1
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0
0
−1
−2
−3
−4
−5
VCE (V)
Tamb = 25 °C
Fig 9. Collector current as a function of
collector-emitter voltage; typical values
10−1
−10−1
−1
−10
−102
−103
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14878
Product data sheet
Rev. 01 — 18 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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