PHC2300 데이터 시트보기 (PDF) - Philips Electronics
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PHC2300 Datasheet PDF : 16 Pages
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Philips Semiconductors
Complementary enhancement mode
MOS transistors
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
Product specification
PHC2300
VALUE
43
UNIT
K/W
102
handbook, full pagewidth
Rth js
(1)
(K/W)
(2)
(3)
(4)
10
(5)
(6)
(7)
(8)
1
(9)
MDA244
P
δ
=
tp
T
10−1
10−6
(10)
10−5
10−4
10−3
10−2
tp
t
T
10−1
tp (s)
1
(1) δ = 1.00.
(6) δ = 0.1.
(2) δ = 0.75.
(7) δ = 0.05.
(3) δ = 0.5.
(8) δ = 0.02.
(4) δ = 0.33.
(9) δ = 0.01.
(5) δ = 0.2.
(10) δ = 0.
Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
P-channel; typical values.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Per FET
V(BR)DSS
VGSth
IDSS
drain-source breakdown voltage
N-channel
P-channel
VGS = 0; ID = 10 µA
VGS = 0; ID = −10 µA
gate-source threshold voltage
N-channel
P-channel
VGS = VDS; ID = 1 mA
VGS = VDS; ID = −1 mA
drain-source leakage current
N-channel
P-channel
VGS = 0; VDS = 240 V
VGS = 0; VDS = −240 V
MIN. TYP. MAX. UNIT
300 −
−300 −
0.8 −
−0.8 −
−
−
−
−
−
V
−
V
2
V
−2 V
100 nA
−100 nA
2002 Jul 09
5
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