PHX20N06T 데이터 시트보기 (PDF) - Philips Electronics
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PHX20N06T Datasheet PDF : 12 Pages
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Philips Semiconductors
PHX20N06T
N-channel TrenchMOS™ standard level FET
120
Pder
(%)
80
03aa13
40
0
0
50
100 Th (°C) 150
Pder = P-------P----t--o---t------- × 100%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of heatsink temperature.
102
ID
Limit RDSon = VDS / ID
(A)
10
1
120
Ider
(%)
80
03aa21
40
0
0
50
100
150
200
Th (°C)
VGS ≥ 10 V
Ider = -I-------I--D--------- × 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of heatsink temperature.
03am70
tp = 10 µ s
100 µ s
DC
1 ms
10 ms
10-1
1
10
102
VDS (V)
Th = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 12834
Product data
Rev. 01 — 16 February 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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