PMBFJ110 데이터 시트보기 (PDF) - Philips Electronics
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PMBFJ110 Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel junction FETs
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
Cis
PARAMETER
input capacitance
Cis
input capacitance
Crs
feedback capacitance
CONDITIONS
VDS = 0
−VGS = 10 V
f = 1 MHz
VDS = 0
−VGS = 0
f = 1 MHz
Tamb = 25 °C
VDS = 0
−VGS = 10 V
f = 1 MHz
Switching times (see Fig.2)
td
delay time
ton
turn-on time
ts
storage time
toff
turn-off time
note 1
note 1
note 1
note 1
Notes
1. Test conditions for switching times are as follows:
VDD = 1.5 V, VGS = 0 to −VGS(off) (all types);
−VGS(off) = 12 V, RL = 100 Ω (PMBFJ108);
−VGS(off) = 7 V, RL = 100 Ω (PMBFJ109);
−VGS(off) = 5 V, RL = 100 Ω (PMBFJ110).
TYP.
15
MAX. UNIT
30 pF
50
85 pF
8
15 pF
2
− ns
4
− ns
4
− ns
6
− ns
k, halfpage
VDD
10 nF
50 Ω
10 µF
50 Ω
0.1 µF
RL
DUT
SAMPLING
SCOPE
50 Ω
MBK295
VGS = 0 V
Vi
−VGS off
10%
90%
90%
Vo
10%
toff
ts
tf
ton
td
tr
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
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