SC1159EVB 데이터 시트보기 (PDF) - Semtech Corporation

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SC1159EVB

Programmable Synchronous DC/DC Hysteretic Controller with VRM 8.5 VID Range

Semtech Corporation 

SC1159

POWER MANAGEMENT

Layout Guidelines (See pg. 1)

1. Locate R8 and C2 close to pins 6 and 7.

2. Locate C1 close to pins 5 and 7.

3. Components connected to IOUT, DROOP, OCP, VHYST,

VREFB, VSENSE, and SOFTST should be referenced to

AGND.

4. The bypass capacitors C5 and C10 should be placed

close to the IC and referenced to DRVGND.

5. Locate bootstrap capacitor C13 close to the IC.

6. Place bypass capacitor close to Drain of the top FET and

Source of the bottom FET to be effective.

7. Route HISENSE and LOSENSE close to each other to

minimize induced differential mode noise.

8. Bypass a high frequency disturbance with ceramic

capacitor at the point where HISENSE is connected to Vin.

9. Input bulk capacitors should placed as close as possible

to the power FETs because of the very high ripple current

flow in this pass.

10. If Schottky diode used in parallel with a synchronous

(bottom) FET, to achieve a greater efficiency at lower Vout

settings, it needs to be placed next to the aforementioned

FET in very close proximity.

11. Since the feedback path relies on the accurate sampling

of the output ripple voltage, the best results can be achieved

by connecting the AGND to the ground side of the bulk

output capacitors.

12. DRVGND pin should be tight to the main ground plane

utilizing very low impedance connection, e.g., multiple vias.

13. In order to prevent substrate glitching, a small (0.5A)

Schottky diode should be placed in close proximity to the

chip with the cathode connected to BOOTLO and anode

connected to DRVGND.

Outline Drawing - SO-28

Contact Information

Semtech Corporation

Power Management Products Division

200 Flynn Road, Camarillo, CA 93012

Phone: (805)498-2111 FAX (805)498-3804

 2002 Semtech Corp.

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www.semtech.com

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