SP0610T 데이터 시트보기 (PDF) - Siemens AG
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SP0610T Datasheet PDF : 8 Pages
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SP 0610T
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
-0.30
A
-0.26
Ptot = 0W
lkj i
ID -0.24
-0.22
-0.20
-0.18
-0.16
-0.14
-0.12
-0.10
-0.08
-0.06
-0.04
-0.02
0.00
0.0 -1.0 -2.0
h
-3.0
-4.0
VGS [V]
a -2.0
b -2.5
g c -3.0
d -3.5
e -4.0
f f -4.5
g -5.0
h -6.0
e i -7.0
j -8.0
k -9.0
d l -10.0
c
b
a
V
-6.0
VDS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
32
ab c
d
e
f
g
Ω
RDS (on)
24
20
16
12
h
8
i
j
lk
4 VGS [V] =
abcdef ghi j kl
-2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 -7.0 -8.0 -9.0 -10.0
0
0.00 -0.04 -0.08 -0.12 -0.16
A -0.24
ID
Typ. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
-0.65
A
-0.55
ID -0.50
-0.45
-0.40
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
0 -1 -2 -3 -4 -5 -6 -7 -8 V -10
VGS
Semiconductor Group
6
0.16
S
gfs
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00
-0.10
-0.20
-0.30
-0.40 A -0.55
ID
Sep-13-1996
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