STPS10L25D(1999) 데이터 시트보기 (PDF) - STMicroelectronics
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STPS10L25D Datasheet PDF : 5 Pages
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Fig.3 : Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
200
180
160
140
120
100
80
60
40 IM
20
t
δ=0.5
0
1E-3
t(s)
1E-2
1E-1
Tc=25°C
Tc=75°C
Tc=100°C
1E+0
STPS10L25D/G
Fig.4 : Relative variation of thermal impedance
junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6 δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
T
δ=tp/T
1E-1
tp
1E+0
Fig.5 : Reverse leakage current versus reverse
voltage applied (typical values).
IR(mA)
5E+2
1E+2
1E+1
Tj=150°C
Tj=125°C
1E+0
1E-1
1E-2
0
Tj=25°C
VR(V)
5
10
15
20
25
Fig.6 : Junction capacitance versus reverse
voltage applied (typical values).
C(nF)
5.0
F=1MHz
Tj=25°C
1.0
0.1
1
2
VR(V)
5
10
20 30
Fig.7 : Forward voltage drop versus forward
current (maximum values).
Fig.8 : Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness : 35 µm).
(STPS10L25G only)
IFM(A)
100.0
10.0
Typical values
Tj=150°C
1.0
Tj=125°C
Tj=25°C
VFM(V)
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
S(Cu) (cm²)
0
0 4 8 12 16 20 24 28 32 36 40
3/5
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