STPS10L25D 데이터 시트보기 (PDF) - STMicroelectronics
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STPS10L25D Datasheet PDF : 5 Pages
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STPS10L25D/G
THERMAL RESISTANCE
Symbol
Rth (j-c) Junction to case
Parameter
Value
1.5
Unit
°C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Tests Conditions
Tests Conditions
Min. Typ. Max. Unit
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 125°C
800 µA
135 260 mA
VF * Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°Χ
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
0.46
V
0.30 0.35
0.55
0.41 0.48
Pulse test: * tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.22 x IF(AV) + 0.013 IF2(RMS)
Fig. 1: Average forward power dissipation versus
average forward current.
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
PF(av)(W)
5.0
4.5
δ = 0.05
4.0
δ = 0.1
δ = 0.2
δ = 0.5
IF(av)(A)
12
10
Rth(j-a)=Rth(j-c)
3.5
8
3.0
2.5
δ=1
6
Rth(j-a)=50°C/W
2.0
4
1.5
T
T
1.0
0.5
IF(av) (A)
δ=tp/T
tp
0.0
0 1 2 3 4 5 6 7 8 9 10 11
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
2/5
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