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SUD50N02-06P-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SUD50N02-06P-E3
Vishay
Vishay Semiconductors 
SUD50N02-06P-E3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
SUD50N02-06P
Vishay Siliconix
THERMAL RATINGS
40
32
24
16
8
0
0
25 50 75 100 125 150 175
TA - Ambient Temperature (°C)
Maximum Drain Current
vs. Ambient Temperature
2
1
Duty Cycle = 0.5
1000
100
10
1
0.1
Limited
by RDS(on)*
TA = 25 °C
Single Pulse
10, 100 µs
1 ms
10 ms
100 ms
1s
10 s
100 s, DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1 Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
1000
0.01
10- 4
10- 3
10- 2
10- 1
1
10
100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71931.
www.vishay.com
Document Number: 71931
4
S11-2308-Rev. D, 21-Nov-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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