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SUD50N06-08H 데이터 시트보기 (PDF) - Vishay Semiconductors

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SUD50N06-08H
Vishay
Vishay Semiconductors 
SUD50N06-08H Datasheet PDF : 5 Pages
1 2 3 4 5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
VGS = 10 thru 6 V
80
80
SUD50N06-08H
Vishay Siliconix
60
60
40
20
5V
0
0
150
125
100
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Output Characteristics
TC = - 55 °C
25 °C
125 °C
75
50
25
0
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
ID - Drain Current (A)
Transconductance
Ciss
Crss
Coss
10
20
30
40
50
60
VDS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73160
S-71661-Rev. B, 06-Aug-07
40
20
0
0
0.015
TC = 125 °C
25 °C
- 55 °C
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.012
0.009
0.006
VGS = 10 V
0.003
0.000
0
20
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
16
VDS = 30 V
ID = 50 A
12
8
4
0
0
40
80
120
160
200
Qg - Total Gate Charge (nC)
Gate Charge
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