SUM110N04-02L-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SUM110N04-02L-E3

N-Channel 40-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

SUM110N04-02L

Vishay Siliconix

N-Channel 40-V (D-S) 175 °C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (Ω)

0.0023 at VGS = 10 V

40

0.0038 at VGS = 4.5 V

ID (A)

110a

TO-263

G DS

Top View

Ordering Information: SUM110N04-02L

SUM110N04-02L-E3 (Lead (Pb)-free)

FEATURES

• TrenchFET® Power MOSFET

• New Package with Low Thermal Resistance

Available

RoHS*

COMPLIANT

D

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

TC = 125 °C

ID

Pulsed Drain Current

IDM

Avalanche Current

IAR

Repetitive Avalanche Energyb

L = 0.1 mH

EAR

Maximum Power Dissipationb

TC = 25 °C

PD

TA = 25 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient

Junction-to-Case (Drain)

Notes:

a. Package limited.

b. Duty cycle ≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

PCB Mountd

* Pb containing terminations are not RoHS compliant, exemptions may apply.

Symbol

RthJA

RthJC

Document Number: 70763

S-80108-Rev. D, 21-Jan-08

Limit

40

± 20

110a

110a

440

75

280

437.5c

3.75

- 55 to 175

Limit

40

0.4

Unit

V

A

mJ

W

°C

Unit

°C/W

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