SUP40N25-60 데이터 시트보기 (PDF) - Vishay Semiconductors
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SUP40N25-60 Datasheet PDF : 7 Pages
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SUP40N25-60
Vishay Siliconix
N-Channel 250 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
250
RDS(on) ()
0.060 at VGS = 10 V
0.064 at VGS = 6 V
ID (A)
40
38.7
Qg (Typ)
95
TO-220AB
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• New Low Thermal Resistance Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Industrial
D
RoHS
COMPLIANT
GD S
Top View
Ordering Information: SUP40N25-60-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.1 mH
EAR
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
250
± 30
40
23
70
35
61
300b
3.75
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)c
Junction-to-Case (Drain)
Notes:
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Symbol
RthJA
RthJC
Limit
40
0.5
Unit
V
A
mJ
W
°C
Unit
°C/W
Document Number: 73132
www.vishay.com
S11-2130 Rev. B, 31-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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