TC623 데이터 시트보기 (PDF) - Microchip Technology

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TC623

3V, Dual Trip Point Temperature Sensor

Microchip Technology 

TC623

1.0 ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

Supply Voltage ......................................................5.5V

Input Voltage Any Input .. (GND – 0.3V) to (VDD +0.3V)

Package Power Dissipation (TA ≤ 70°C)

Plastic DIP .............................................730mW

SOIC ...................................................... 470mW

Derating Factors

Plastic DIP ............................................8mW/°C

SOIC .....................................................6mW/°C

Operating Temperature

V Version ................................. -40°C to +125°C

E Version ................................... -40°C to +85°C

C Version ...................................... 0°C to +70°C

Storage Temperature.......................... -65°C to +150°C

*Stresses above those listed under "Absolute Maximum Rat-

ings" may cause permanent damage to the device. These are

stress ratings only and functional operation of the device at

these or any other conditions above those indicated in the

operation sections of the specifications is not implied. Expo-

sure to Absolute Maximum Rating conditions for extended

periods may affect device reliability.

TC623 ELECTRICAL SPECIFICATIONS

Electrical Characteristics: Over Operating Temperature Range, VDD = 2.7V to 4.5V, unless otherwise specified.

Symbol

Parameter

Min

Typ.

Max

Unit

Test Conditions

VDD

IDD

TSET

VOH

VOL

HYS

Supply Voltage Range

Supply Current

Absolute Accuracy

Output Voltage High

Output Voltage Low

Hysteresis

2.7

—

T- 3

0.9 x VDD

0.8 x VDD

—

—

—

—

150

T ±1

—

—

—

—

—

4.5

250

T+3

—

—

0.1 x VDD

0.2 x VDD

-2

V

µA 2.7V ≤ VDD ≤ 4.5V

°C T = Programmed Temperature

V

IOH = 250µA

V

IOH = 500µA

V

IOL = 500 µA

V

IOL = 1mA

°C Falling Temperature

DS21441B-page 2

© 2002 Microchip Technology Inc.

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