TGA2520 데이터 시트보기 (PDF) - TriQuint Semiconductor

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TGA2520

12-16 GHz High Linearity Amplifier

TriQuint Semiconductor 

TGA2520

TABLE II

RF CHARACTERIZATION TABLE

(TA = 25°C, Nominal)

(Vd =6 V, Id = 850mA ± 5%)

SYMBOL PARAMETER

Gain

Small Signal Gain

TEST

CONDITION

F = 12-16

LIMITS

UNITS

MIN TYP MAX

33

dB

IRL

Input Return Loss F = 12-16

8

dB

ORL

Output Return Loss F = 12-16

12

dB

PWR

Output Power @

Pin = +5 dBm

F = 12-16

31

dBm

Note: Table II Lists the RF Characteristics of typical devices as determined by

fixtured measurements.

TABLE III

THERMAL INFORMATION

PARAMETER

Rθjc Thermal Resistance

(Channel to Backside)

Rθjc Thermal Resistance

(Channel to Backside)

TEST CONDITION

VD = 6 V

ID = 850 mA

PD = 5.1 W

Vd = 6V

Id = 1200 mA (under drive)

Pdiss = 6 W

Pout = 1.2 W (RF)

TCH (°C)

Rθjc

(°C/W)

MTTF

(HRS)

138 13.33 2.9 E+6

150 13.33 1.0 E+6

Note: Assumes eutectic attach using 1.5mil 80/20 AuSn mounted to a 20mil CuMo carrier at

70°C baseplate temperature. Worst case condition with no RF applied, 100% of DC

power is dissipated.

TriQuint Semiconductor Texas www.triquint.com Phone : (972)994-8465 Fax: (972)994-8504 info-mmw@tqs.com

3

June

2006

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