TK09H90A 데이터 시트보기 (PDF) - Toshiba

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TK09H90A

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π -MOS IV)

Toshiba 

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Gate leakage current

Gate−source breakdown voltage

Drain cutoff current

Drain−source breakdown voltage

Gate threshold voltage

Drain−source ON resistance

Forward transfer admittance

Input capacitance

Reverse transfer capacitance

Output capacitance

Rise time

IGSS

V (BR) GSS

IDSS

V (BR) DSS

Vth

RDS (ON)

|Yfs|

Ciss

Crss

Coss

VGS = ±30 V, VDS = 0 V

IG = ±10 μA, VDS = 0 V

VDS = 720 V, VGS = 0 V

ID = 10 mA, VGS = 0 V

VDS = 10 V, ID = 1 mA

VGS = 10 V, ID = 4.0 A

VDS = 10 V, ID = 4.0 A

VDS = 25 V, VGS = 0 V, f = 1 MHz

tr

ID=4A

TK09H90A

Min Typ. Max Unit

—

—

±10

μA

±30 —

—

V

—

—

100

μA

900

—

—

V

2.0

—

4.0

V

—

1.0 1.3

Ω

3.5 6.0

—

S

— 2200 —

—

45

—

pF

— 190 —

—

25

—

Switching time

Turn on time

Fall time

Turn off time

Total gate charge (gate−source

plus gate−drain)

Gate−source charge

Gate−drain (“Miller”) charge

ton

4.7Ω

RL=100Ω

—

65

—

ns

tf

—

20

—

VDD=400V

toff

— 120 —

Qg

Qgs

VDD ≈ 400 V, VGS = 10 V, ID = 9 A

Qgd

—

60

—

—

34

—

nC

—

26

—

Source−Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Continuous drain reverse current

(Note 1)

Pulse drain reverse current

(Note 1)

Forward voltage (diode)

Reverse recovery time

Reverse recovery charge

Symbol

IDR

IDRP

VDSF

trr

Qrr

Test Condition

—

—

IDR = 9 A, VGS = 0 V

IDR = 9 A, VGS = 0 V

dIDR / dt = 100 A / μs

Min Typ. Max Unit

—

—

9

A

—

—

27

A

—

—

−1.9

V

— 1450 —

ns

—

17

—

μC

Marking

TOSHIBA

TK09H90A

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-13

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