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TK09H90A 데이터 시트보기 (PDF) - Toshiba
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TK09H90A
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type(π -MOS IV)
Toshiba
TK09H90A Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
Common source
10
6
Tc
=
25°C
8
5
Pulse test
4
3
4.75
2
4.5
1
4.25
VGS
=
4 V
0
0
2
4
6
8
10
Drain
−
source voltage V
DS
(V)
TK09H90A
I
D
– V
DS
10
10 6
8
8
5.5
Common source
Tc
=
25°C
Pulse test
5.25
6
5
4
4.75
2
4.5
VGS
=
4 V
0
0
10
20
30
40
50
Drain
−
source voltage V
DS
(V)
30
Common source
VDS
=
10 V
Pulse test
I
D
– V
GS
20
25
10
100
Tc
= −
55°C
0
0
2
4
6
8
10
Gate
−
source voltage V
GS
(V)
V
DS
– V
GS
20
Common source
Tc
=
25°C
Pulse test
16
12
ID
=
9 A
8
4.5
4
2.3
0
0
4
8
12
16
20
Gate
−
source voltage V
GS
(V)
100
Common source
VDS
=
10 V
Pulse test
⎪
Y
fs
⎪ −
I
D
10
Tc
= −
55°C
100
25
1
R
DS (ON)
−
I
D
10
Common source
Tc
=
25°C
Pulse test
VGS
=
10 V
1
0.1
0.1
1
10
Drain current I
D
(A)
0.1
0.1
1
10
Drain current I
D
(A)
3
2006-11-13
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