¡ Semiconductor
MSM82C84A-2RS/GS/JS
AC CHARACTERISTICS
(1)
Parameter
EFI "H" Pulse Width
EFI "L" Pulse Width
EFI Cycle Time
Crystal Oscillator Frequency
Set up Time of RDY 1 or RDY 2 to
CLK Falling Edge (Active)
Set up Time of RDY 1 or RDY 2 to
CLK Rising Edge (Active)
Set up Time of RDY 1 or RDY 2 to
CLK Falling Edge (Inactive)
Symbol
tEHEL
tELEH
tELEL
—
tR1VCL
tR1VCH
tR1VCL
Min.
13
17
36
6
Max.
—
—
—
24
35
—
35
—
35
—
(VCC = 5 V ± 10%, Ta = –40 to 85°C)
Unit
Conditions
ns
90% to 90%
ns
10% to 10%
ns
—
MHz
—
ns
ASYNC
= High
ns
ASYNC
= Low
ns
—
Hold Time of RDY 1 or RDY 2 to
CLK Falling Edge
tCLR1X
0
—
ns
Set up Time of ASYNC to CLK
Falling Edge
tAYVCL
50
—
ns
Hold Time of ASYNC to
CLK Falling Edge
tCLAYX
0
—
ns
—
Output Load
Capacitance
—
CLK output
CL = 100 pF
—
Others 30 pF
Set up Time of AEN 1 (AEN 2) to
RDY 1 (RDY 2) Rising Edge
tA1R1V
15
—
ns
—
Hold Time of AEN 1 (AEN 2) to
CLK Falling Edge
tCLA1X
0
—
ns
—
Set up Time of CSYNC to EFI
Rising Edge
tYHEH
20
—
ns
—
Hold Time of CSYNC to EFI
Rising Edge
tEHYL
10
—
ns
—
CSYNC Pulse Width
tYHYL 2 ¥ tELEL —
ns
—
Set up Time of RES to CLK Falling
Edge
tI1HCL
65
—
ns
—
Hold Time of RES to CLK Falling
Edge
tCLI1H
20
—
ns
—
Input Rising Edge Time
Input Falling Edge Time
tILIH
—
15
ns
—
tIHIL
—
15
ns
—
Note: Parameters where timing has not been indicated in the above table are measured at
VL = 1.5 V and VH = 1.5 V for both inputs and outputs.
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