2N6426(2001) 데이터 시트보기 (PDF) - ON Semiconductor

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2N6426
(Rev.:2001)

Darlington Transistors NPN Silicon

ON Semiconductor 

2N6426 2N6427

SMALL–SIGNALCHARACTERISTICS

20

4.0

VCE = 5.0 V

10

TJ = 25°C

f = 100 MHz

2.0 TJ = 25°C

7.0

Cibo

1.0

5.0

Cobo

0.8

0.6

3.0

0.4

2.0

0.04

0.1 0.2 0.4 1.0 2.0 4.0 10 20 40

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

0.2

0.5 1.0 2.0

0.5 10 20

50 100 200 500

IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

200Ăk

100Ăk

70Ăk

50Ăk

TJ = 125°C

25°C

30Ăk

20Ăk

10Ăk

7.0Ăk

5.0Ăk

-ā55°C

3.0Ăk

VCE = 5.0 V

2.0Ăk

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 8. DC Current Gain

3.0

2.5

IC = 10 mA 50 mA

2.0

TJ = 25°C

250 mA 500 mA

1.5

1.0

0.5

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000

IB, BASE CURRENT (µA)

Figure 9. Collector Saturation Region

1.6

TJ = 25°C

1.4

VBE(sat) @ IC/IB = 1000

1.2

VBE(on) @ VCE = 5.0 V

1.0

0.8

VCE(sat) @ IC/IB = 1000

-ā1.0 *APPLIES FOR IC/IB ≤ hFE/3.0

-ā2.0 *RqVC FOR VCE(sat)

-ā3.0

-ā4.0

qVB FOR VBE

-ā5.0

25°C TO 125°C

-ā55°C TO 25°C

25°C TO 125°C

-ā55°C TO 25°C

0.6

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

-ā6.0

5.0 7.0 10

20 30 50 70 100 200 300 500

IC, COLLECTOR CURRENT (mA)

Figure 10. “On” Voltages

Figure 11. Temperature Coefficients

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