2N6427RLRA 데이터 시트보기 (PDF) - ON Semiconductor
부품명
상세내역
제조사
2N6427RLRA Datasheet PDF : 6 Pages
| |||
2N6426*, 2N6427
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage, (Note 1)
(IC = 10 mAdc, VBE = 0)
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current
(VEB= 10 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain, (Note 1)
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
ICBO
IEBO
hFE
(IC = 100 mAdc, VCE = 5.0 Vdc)
2N6426
2N6427
(IC = 500 mAdc, VCE = 5.0 Vdc)
Collector −Emitter Saturation Voltage
(IC = 50 mAdc, IB = 0.5 mAdc)
(IC = 500 mAdc, IB = 0.5 mAdc
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
Base −Emitter On Voltage
(IC = 50 mAdc, VCE = 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Small−Signal Current Gain
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Current −Gain − High Frequency
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
Output Admittance
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
2N6426
2N6427
VCE(sat)
VBE(sat)
VBE(on)
Cobo
Cibo
hie
hfe
|hfe|
hoe
NF
Min
Typ
Max
Unit
40
−
−
Vdc
40
−
−
Vdc
12
−
−
Vdc
−
−
1.0
mAdc
−
−
50
nAdc
−
−
50
nAdc
20,000
10,000
−
−
200,000
−
100,000
30,000
20,000
−
300,000
−
200,000
20,000
14,000
−
200,000
−
140,000
Vdc
−
0.71
1.2
−
0.9
1.5
−
1.52
2.0
Vdc
−
1.24
1.75
Vdc
−
5.4
−
10
100
−
50
−
20,000
−
10,000
−
1.5
2.4
1.3
2.4
−
−
−
3.0
7.0
pF
15
pF
2000
1000
−
−
−
−
1000
kW
−
−
mmhos
10
dB
http://onsemi.com
2
Share Link: 