UT2312 데이터 시트보기 (PDF) - Unisonic Technologies

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UT2312

5A, 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Unisonic Technologies 

UNISONIC TECHNOLOGIES CO., LTD

UT2312

5A, 20V N-CHANNEL

ENHANCEMENT MODE MOSFET

 DESCRIPTION

The UT2312 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

 FEATURES

* RDS(ON) ≤ 33 mΩ @ VGS =4.5V, ID =5.0 A

* RDS(ON) ≤ 40 mΩ @ VGS =2.5 V, ID =4.0 A

* Advanced trench process technology

* Excellent thermal and electrical capabilities

* High density cell design for ultra low on-resistance

 SYMBOL

Power MOSFET

 ORDERING INFORMATION

Ordering Number

Lead Free

Halogen Free

UT2312L-AE2-R

UT2312G-AE2-R

UT2312L-AE3-R

UT2312G-AE3-R

UT2312L-S08-R

UT2312G-S08-R

Note: Pin Assignment: G: Gate S: Source D: Drain

Package

SOT-23-3

SOT-23

SOP-8

Pin Assignment

12345678

Packing

G S D - - - - - Tape Reel

G S D - - - - - Tape Reel

S S S G D D D D Tape Reel

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