TN0201L/0401L, VN0300L/LS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Ohmic Region Characteristics
2.0
VGS = 10 V
7V
6V
1.6
Output Characteristics for Low Gate Drive
200
10 V
2.9 V
2.7 V
160
5V
1.2
0.8
4V
0.4
3V
2V
0
0
1
2
3
4
5
VDS – Drain-to-Source Voltage (V)
Transfer Characteristics
500
TJ = –55_C
400
125_C
VDS = 15 V
300
120
2.5 V
80
2.3 V
40
2.1 V
1.7 V
0
0
0.4
0.8
1.2
1.6
2.0
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
3
I D = 0.2 A
2
0.5 A
200
100
25_C
0
0
1
2
3
4
5
VGS – Gate-Source Voltage (V)
On-Resistance vs. Drain Current
2.5
2.0
VGS = 4.5 V
1.5
6V
1.0
10 V
0.5
0
0
1
2
3
ID – Drain Current (A)
Document Number: 70199
S-04279—Rev. E, 16-Jul-01
1.0 A
1
0
0
2.25
4
8
12
16
20
VGS – Gate-Source Voltage (V)
Normalized On-Resistance
vs. Junction Temperature
2.00
1.75
VGS = 10 V
I D = 0.5 A
1.50
0.1 A
1.25
1.00
0.75
0.50
–50 –10
30
70
110
150
TJ – Junction Temperature (_C)
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