VIT2060C(2017) 데이터 시트보기 (PDF) - Vishay Semiconductors

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VIT2060C
(Rev.:2017)

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

www.vishay.com

VT2060C, VIT2060C

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Instantaneous forward voltage per diode

Reverse current per diode

IF = 5 A

IF = 10 A

IF = 5 A

IF = 10 A

VR = 60 V

TA = 25 °C

TA = 125 °C

TA = 25 °C

TA = 125 °C

VF (1)

IR (2)

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

TYP.

0.49

0.57

0.40

0.52

-

14

MAX.

-

0.65

-

0.59

850

40

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

VT2060C

VIT2060C

per diode

3.0

Typical thermal resistance

RJC

per device

1.8

UNIT

V

μA

mA

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AB

VT2060C-M3/4W

1.88

TO-262AA

VIT2060C-M3/4W

1.45

PACKAGE CODE

4W

4W

BASE QUANTITY

50/tube

50/tube

DELIVERY MODE

Tube

Tube

Revision: 09-Nov-17

2

Document Number: 89233

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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