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ZXMN10A11GTA(2010) 데이터 시트보기 (PDF) - Diodes Incorporated.
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ZXMN10A11GTA
(Rev.:2010)
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Diodes Incorporated.
ZXMN10A11GTA Datasheet PDF : 8 Pages
1
2
3
4
5
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7
8
Typical Characteristics - continued
A Product Line of
Diodes Incorporated
ZXMN10A11G
Test Circuits
Q
G
V
G
Q
GS
Q
GD
Charge
Basic gate charge waveform
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
(on)
t
d(off)
t
r
t
(on)
Switching time waveforms
Current
regulator
12V
50k
Same as
D.U.T
V
DS
I
G
D.U.T
I
D
V
GS
Gate charge test circuit
V
GS
R
G
R
D
V
DS
V
DD
Switching time test circuit
ZXMN10A11G
Document Number DS32056 Rev. 6 - 2
6 of 8
www.diodes.com
January 2010
© Diodes Incorporated
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