IRF740APBF 데이터 시트보기 (PDF) - International Rectifier

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IRF740APBF

HEXFET® Power MOSFET

International Rectifier 

IRF740APbF

100000

10000

1000

100

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

10

1

1

Crss

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20

ID = 10A

16

12

VDS = 320V

VDS = 200V

VDS = 80V

8

4

FOR TEST CIRCUIT

SEE FIGURE 13

0

0

10

20

30

40

QG, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

10

TJ = 150° C

1

TJ = 25° C

0.1

0.2

VGS = 0 V

0.4 0.6 0.8 1.0 1.2 1.4

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10us

100us

10

1ms

TC = 25°C

TJ = 150°C

Single Pulse

1

10

100

10ms

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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