K30A 데이터 시트보기 (PDF) - Unspecified
부품명
상세내역
제조사
K30A Datasheet PDF : 1 Pages
| |||
Silicon Junction FETs
LH03 Series of Products interconvert:
2SK30A
Silicon N-Chinnel Junction FET
Application:
For charge sensor, meter amplifier circuit, rheostat , chopper and
gain controller for AGC ，electronic switch.
XIAOSHENG
Symbol:
Drain
Gate
Source
Package example:
Absolute Maximum Ratings (Ta=25℃)
Parameter
Symbol Ratings Unit
Gate to Drain voltage
VGDO
-50
V
Gate to Source voltage
VGSO
-50
V
Gate current
IG
10
mA
Allowable power dissipation
PD
250
mW
Junction Temperature
Tj
125
℃
Storage Temperature
Tstg
-55 to +125 ℃
Package
SC-59
SOT-23
TO-92S
* TO-92
TO-18
DSG
312
Electrical Characteristics (Ta=25℃)
Prameter
Symbol
Conditions
min typ max Unit
Drain to Source cut-off current
IDSS
VDS = 10V, VGS = 0V
0.3
6.5 mA
Gate to Source leakage current
Gate to Drain voltage
IGSS
VGS= -30V, VDS = 0V
VGDS IG = -100μA，VDS = 0V
-50
-1.0 nA
V
Gate to Source cut-off voltage
Forward transfer admittamce
VGS(OFF) VDS = 10V, ID = 0.1μA
-0.4
| Yfs | VDS=10V，VGS=0V，f=1KHZ 1.2
-5.0 V
mS
Input capacitance (Common Source)
Ciss
8.2
pF
VDS = 10V，VGS = 0V，f = 1MHZ
Reverse transfer capacitance (Common Source)
Crss
2.6
pF
IDSS Rank Classification
Runk
R
IDSS(mA)
0.3 to 0.75
Marking Symbol
035D
O
0.6 to 1.4
035E
Y
1.2 to 3.0
035F
GR
2.6 to 6.5
035G
Xiaosheng Electronic & Telechnology CO. ,LTD.
Tel: 86-021-64859219 Fax: 86-021-64859219 www.on-ele.org Email:xiaosheng_sh@126.com
Room 206 3rd building 195-16 Tianlin RD. Shanghai China
Share Link: 