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VS-30EPF04-M3(2011) 데이터 시트보기 (PDF) - Vishay Semiconductors

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VS-30EPF04-M3
(Rev.:2011)
Vishay
Vishay Semiconductors 
VS-30EPF04-M3 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
VS-30.PF0.PbF Series, VS-30.PF0.-M3 Series
www.vishay.com
Vishay Semiconductors
1000
100
TJ = 25 °C
10
TJ = 150 °C
30.PF.. Series
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
0.20
0.15
0.10
30.PF.. Series
TJ = 25 °C
IFM = 30 A
IFM = 20 A
IFM = 10 A
IFM = 5 A
IFM = 1 A
0.05
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
4.0
3.5 30.PF.. Series
TJ = 25 °C
3.0
IFM = 30 A
IFM = 20 A
2.5
2.0
IFM = 10 A
1.5
1.0
IFM = 5 A
0.5
IFM = 1 A
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.5
30.PF.. Series
TJ = 150 °C
0.4
IFM = 30 A
0.3
IFM = 20 A
IFM = 10 A
IFM = 5 A
0.2
IFM = 1 A
0.1
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
10
9
30.PF.. Series
TJ = 150 °C
8
IFM = 30 A
7
IFM = 20 A
6
5
4
IFM = 10 A
3
2
IFM = 5 A
1
IFM = 1 A
0
0
200
400
600
800 1000
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
Revision: 20-Oct-11
4
Document Number: 93693
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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