BAS56 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS56

High-speed double diode

NXP Semiconductors. 

NXP Semiconductors

BAS56

High-speed double diode

7. Characteristics

Table 7. Characteristics

Tj = 25 °C unless otherwise specified.

Symbol Parameter

Conditions

VF

forward voltage

IF = 200 mA

IR

reverse current

VR = 60 V

VR = 60 V; Tj = 150 °C

VR = 120 V

VR = 120 V; Tj = 150 °C

Cd

diode capacitance

f = 1 MHz; VR = 0 V

trr

reverse recovery time

VFR

forward recovery voltage

Min Typ Max Unit

[1] -

-

1

V

-

-

100 nA

-

-

100 μA

[2] -

-

100 nA

[2] -

-

100 μA

-

-

2.5 pF

[3] -

-

6

ns

[4] -

-

2

V

[5] -

-

1.5 V

[1] Tamb = 25 °C; device has reached the thermal equilibrium when mounted on an FR4 PCB.

[2] Series connection.

[3] When switched from IF = 400 mA to IR = 400 mA; RL = 100 Ω; measured at IR = 40 mA.

[4] When switched from IF = 400 mA; tr = 30 ns.

[5] When switched from IF = 400 mA; tr = 100 ns.

BAS56

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 3 — 29 June 2010

© NXP B.V. 2010. All rights reserved.

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