2N3055 데이터 시트보기 (PDF) - NTE Electronics

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2N3055

Silicon NPN Power Transistor Audio Power Amp, Medium Speed Switch TO−3 Type Package

NTE Electronics 

Electrical Characteristics (Cont’d): (TC =+25C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

ON Characteristics (Note 2)

DC Current Gain

Collector−Emitter Saturation Voltage

Base−Emitter ON Voltage

Second Breakdown

hFE

VCE(sat)

VBE(on)

IC = 4A, VCE = 4V

IC = 10A, VCE = 4V

IC = 4A, IB = 400mA

IC = 10A, IB = 3.3A

IC = 4A, VCE = 4V

20 − 70

5−−

− − 1.1 V

− − 3.0 V

− − 1.5 V

Second Breakdown Collector Current

with Base Forward Biased

Is/b VCE = 40V, t = 1.0s; Nonrepetitive

2.87 − − A

Dynamic Characteristics

Current Gain−Bandwidth Product

Small−Signal Current Gain

Small−Signal Current Gain Cutoff

Frequency

fT

IC = 500mA, VCE = 10V, f = 1MHz

hfe IC = 1A, VCE = 4V, f = 1kHz

fhfe VCE = 4V, IC = 1A, f = 1kHz

2.5 − − MHz

15 − 120

10 − − kHz

Note 2. Pulse Test: Pulse Width  300s. Duty Cycle  2%.

.350 (8.89)

.135 (3.45) Max

.875 (22.2)

Dia Max

Seating

Plane

.312 (7.93) Min

.040 (1.02)

Emitter

1.187 (30.16)

.215 (5.45)

.430

(10.92)

.665

(16.9)

.156 (3.96) Dia

(2 Holes)

.188 (4.8) R Max

Base

.525 (13.35) R Max

Collector/Case

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