2N5401 데이터 시트보기 (PDF) - Diotec Semiconductor Germany

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2N5401

General Purpose Si-Epitaxial Planar Transistors

Diotec Semiconductor Germany  

2N5400 / 2N5401

2N5400 / 2N5401

PNP

General Purpose Si-Epitaxial Planar Transistors

Si-Epitaxial Planar-Transistoren für universellen Einsatz

Version 2006-06-17

Power dissipation

Verlustleistung

Plastic case

CBE

Kunststoffgehäuse

Weight approx. – Gewicht ca.

2 x 2.54

Dimensions - Maße [mm]

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Standard packaging taped in ammo pack

Standard Lieferform gegurtet in Ammo-Pack

PNP

625 mW

TO-92

(10D3)

0.18 g

Maximum ratings (TA = 25°C)

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Emitter-Base-voltage – Emitter-Basis-Spannung

Power dissipation – Verlustleistung

Collector current – Kollektorstrom (dc)

Peak Collector current – Kollektor-Spitzenstrom

Base current – Basisstrom

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

B open

E open

C open

- VCE0

- VCBO

- VEBO

Ptot

- IC

- ICM

- IB

Tj

TS

Grenzwerte (TA = 25°C)

2N5400

2N5401

120 V

150 V

130 V

160 V

5V

625 mW 1)

600 mA

1A

100 mA

-55...+150°C

-55…+150°C

Characteristics (Tj = 25°C)

DC current gain – Kollektor-Basis-Stromverhältnis 2)

- IC = 1 mA,

- IC = 10 mA,

- IC = 50 mA,

- VCE = 5 V

- VCE = 5 V

- VCE = 5 V

2N5400

- IC = 1 mA,

- IC = 10 mA,

- IC = 50 mA,

- VCE = 5 V

- VCE = 5 V

- VCE = 5 V

2N5401

Collector-Base cutoff current – Kollektor-Basis-Reststrom

- VCB = 100 V, (E open)

- VCB = 120 V, (E open)

2N5400

2N5401

- VCB = 100 V, Tj = 100°C, (E open)

- VCB = 120 V, Tj = 100°C, (E open)

2N5400

2N5401

hFE

hFE

hFE

hFE

hFE

hFE

- ICBO

- ICBO

- ICBO

- ICBO

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

30

–

–

40

–

180

40

–

–

50

–

–

60

–

240

50

–

–

–

–

100 nA

–

–

50 nA

–

–

100 µA

–

–

50 µA

1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

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http://www.diotec.com/

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