2N5804 데이터 시트보기 (PDF) - Inchange Semiconductor

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2N5804

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2N5804 2N5805

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS)

Collector-emitter

sustaining voltage

2N5804

2N5805

IC=0.1A ;IB=0

VCEsat Collector-emitter saturation voltage IC=5A; IB=1A

VBEsat Base-emitter saturation voltage

IC=5A ;IB=1A

ICEO

Collector cut-off current

VCE=RatedVCE; IB=0

2N5804

ICEV

Collector cut-off current

VCE=RatedVCE; VBE(off)=1.5V

2N5805

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

IC=5A ; VCE=4V

fT

Trainsistion frequency

IC=1A ; VCE=10V

MIN TYP. MAX UNIT

225

V

300

1.0

V

1.5

V

10

mA

12

mA

10

1.0

mA

20

100

15

MHz

2

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