2N6653 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6653 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6653
DESCRIPTION
·With TO-3 package
·High voltage capability
·Fast switching speeds
·Low saturation voltage
APPLICATIONS
·Switcing regulators
·Inverters
·Solenoid and relay drivers
·Deflection circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
MAXIMUN RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Tc=25℃
VALUE
350
300
6
20
30
150
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance from junction to case
MAX
1.0
UNIT
℃/W
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