2SA1943G 데이터 시트보기 (PDF) - Unisonic Technologies
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2SA1943G Datasheet PDF : 4 Pages
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2SA1943
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TC = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-230
V
Collector-Emitter Voltage
VCEO
-230
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-15
A
Base Current
IB
-1.5
A
Collector Power Dissipation (Tc=25℃)
PC
150
W
Junction Temperature
TJ
+150
℃
Storage Temperature Range
TSTG
-65 ~ +125
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70℃ operating temperature range
and assured by design from –20℃~85℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base -Emitter Voltage
Transition Frequency
Collector Output Capacitance
CLASSIFICATION OF hFE
Rank
Range
R
55 ~ 110
SYMBOL
ICBO
IEBO
V(BR) CEO
hFE
hFE
VCE (SAT)
VBE
fT
Cob
TEST CONDITIONS
VCB = -230V, IE=0
VEB= -5V, IC=0
IC= -50mA, IB=0
VCE= -5V, IC= -1A
VCE= -5V, IC= -7A
IC= -8A, IB= -0.8A
VCE= -5V, IC= -7A
VCE= -5V, IC= -1A
VCB= -10V, IE=0, f=1MHz
O
80 ~ 160
MIN TYP MAX UNIT
-5.0 μA
-5.0 μA
-230
V
55
160
35 60
-1.5 -3.0 V
-1.0 -1.5 V
30
MHz
360
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R214-006,C
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