2SB1412 데이터 시트보기 (PDF) - Unisonic Technologies
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2SB1412 Datasheet PDF : 5 Pages
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2SB1412
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
-10
-5 VCE = -2V
-2
-1
-500m
-200m
-100m
-50m
Ta=100℃
Ta=25℃
Ta= -25℃
-20m
-10m
-5m
-2m
-1m
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage:VBE(V)
DC Current Gain vs.Collector Current (I)
5k
Ta=25℃
2k
1k
500
VcE= -5V
200
100
VcE= -2V
50
VcE= -1V
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
DC Current Gain vs.Collector Current (III)
5k
VcE= -2V
2k
1k
500
Ta=100℃
200
100
Ta= -25℃ Ta=25℃
50
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
Grounded Emitter Output
Characteristics
-5
-50mA
-30mA Ta=25℃
-45mA
-4
-25mA
-20mA
-15mA
-3
-10mA
-2
-35mA
-40mA
-5mA
-1
0
IB =0mA
0 -0.4 -0.8 -1.2 -1.6 -2.0
Collector to Emitter Voltage:VCE(V)
DC Current Gain vs.Collector
Current(II)
5k
VcE= -1V
2k
1k
500
Ta=100℃
200
100
Ta=25℃ Ta= -25℃
50
20
10
5
-1m-2m-5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
Collector-emitter Saturation Voltage
vs.Collector Current (I)
-5
Ta=25℃
-2
-1
-0.5
-0.2
-0.1
-0.05
Ic/IB=50/1
40/1
30/1
10/1
-0.02
-0.01
-2m -5m-0.01-0.02-0.05 -0.1-0.2-0.5 -1 -2 -5 -10
Collector Current : Ic(A)
3 of 5
QW-R209-021.B
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