2SB1503Q 데이터 시트보기 (PDF) - SavantIC Semiconductor
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2SB1503Q Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SB1503
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-7A ;IB=-7mA
VBEsat
Base-emitter saturation voltage
IC=-7A ;IB=-7mA
ICBO
Collector cut-off current
VCB=-160V; IE=0
ICEO
Collector cut-off current
VCE=-140V; IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-5V
hFE-2
DC current gain
IC=-7A ; VCE=-5V
fT
Transition frequency
IC=-0.5A ; VCE=-10V;f=1MHz
Switching times
-140
2000
5000
V
-2.5
V
-3.0
V
-100
µA
-100
µA
-100
µA
30000
20
MHz
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-7A ;IB1=-IB2=-7mA
VCC=-50V
1.0
µs
1.5
µs
1.2
µs
hFE-2 classifications
Q
S
P
5000-10000 7000-21000 8000-30000
2
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