2SB857L-D-T6C-T(2005) 데이터 시트보기 (PDF) - Unisonic Technologies
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2SB857L-D-T6C-T Datasheet PDF : 4 Pages
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2SB857
TYPICAL CHARACTERISTICS
1000
hFE vs. Collector Current
hFE @ VCE=4V
100
PNP SILICON TRANSISTOR
10000
Saturation Voltage vs. Collector Current
1000
VBE(SAT) @ IC=10IB
10
1
1
10000
100
VBE (SAT ) @ IC=10IB
10
10
100
1000
10000
1
Collector Current(mA)
10
100
1000
Collector Current(mA)
10000
On Voltage vs. Collector Current
1000
Capacitance vs. Reverse-Biased Voltage
1000
VBE(ON) @ VCE=4V
100
Cob
100
1
10
10
100
1000
10000
1
Collector Current(mA)
Safe Operating Area
10
PT=1ms
10
100
Reverse-Biased Voltage (V)
1
PT=1s
PT=100ms
0.1
1
10
100
1000
Forward Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R217-206,C
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