2SC4617L(2005) 데이터 시트보기 (PDF) - Unisonic Technologies

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2SC4617L
(Rev.:2005)

GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SC4617

NPN EPITAXIAL SILICON TRANSISTOR

ABSOLUATE MAXIUM RATINGS (Ta = 25℃)

PARAMETER

Collector -Base Voltage

Collector -Emitter Voltage

Emitter -Base Voltage

DC Collector Current

Power Dissipation

Operating Temperature

Storage Temperature

SYMBOL

VCBO

VCEO

VEBO

IC

PD

TJ

TSTG

RATINGS

60

50

7

150

150

+150

-40 ~ +150

UNIT

V

V

V

mA

mW

℃

℃

ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

Collector Base Breakdown Voltage

BVCBO IC= 50μA

60

Collector Emitter Breakdown Voltage BVCEO IC= 1mA

50

Emitter-base Breakdown Voltage

BVEBO IE=50μA

7

Collector Cut-Off Current

ICBO VCB=60V

Emitter Cut-Off Current

IEBO VEB= 7V

DC Current Transfer Ratio

hFE VCE=6V,Ic=1mA

120

Collector-Emitter Saturation Voltage VCE(sat) IC=50mA, IB=5mA

Transition Frequency

fT VCE=12V, IE= -2mA, f=100MHz

Output Capacitance

Cob VCE= 12V, IE= 0A, f=1MHz

TYP MAX UNIT

V

V

V

0.1 μA

0.1 μA

560

0.4

V

180

MHz

2 3.5 pF

CLASSIFICATION OF hFE

RANK

RANGE

Q

120 ~ 270

R

180 ~ 390

S

270 ~ 560

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2

QW-R206-081,A

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