2SC4617
TYPICAL CHARACTERICS(cont.)
Collector-emitter saturation voltage vs.
collector current(Ι)
0.5
IC/IB = 10
0.2
Ta = 100℃
0.1
25℃
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT, I C (mA)
Gain bandwidth product vs. emitter current
Ta = 25℃
500 VCE =6V
200
100
50
-0.5 -1 -2
-5 -10 -20 -50 -100
COLLECTOR CURRENT, IE (mA)
Base-collector time constant
vs. emitter current
Ta=25℃
200
f=32MHZ
VCB=6V
100
50
20
10
-0.2
-0.5 -1
-2
-5 -10
EMITTER CURRENT, IE (mA)
NPN EPITAXIAL SILICON TRANSISTOR
Collector-emitter saturation voltage vs.
collector current (Ⅱ)
0.5
IC/IB = 50
Ta = 100℃
0.2
25℃
0.1
0.05
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100
COLLECTOR CURRENT, I C (mA)
Collector output capacitance vs. collector-base voltage
Emitter input capacitance vs. emitter-base voltage
20
10
Cib
5
Ta=25℃
f=1MHz
IE=0A
IC=0A
2
Cob
1
0.2 0.5 1 2
5 10 20 50
COLLECTOR TO BASE VOLTAGE , VCB (V)
EMITTER TO BASE VOLTAGE , VEB (V)
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www.unisonic.com.tw
4
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