SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5404
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A; IB=1.75A
VBEsat
Base-emitter saturation voltage
IC=7A; IB=1.75A
ICBO
Collector cut-off current
VCB=1500V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Cob
Collector output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=0.1A ; VCE=10V
Switching times
ts
Storage time
tf
Fall time
ICP=5.5A;IB1(end)=1.1A
fH =64kHz
MIN TYP. MAX UNIT
600
V
3.0
V
1.5
V
1.0
mA
10
µA
10
40
4
8
115
pF
2.5
MHz
2.5
3.5
µs
0.15 0.3
µs
2