2SD1611 데이터 시트보기 (PDF) - TY Semiconductor

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2SD1611

Silicon NPN Triple Diffusion Planar Type Darlington

TY Semiconductor 

SMD Type

Electrical Characteristics Ta = 25

Parameter

Emitter-base voltage (Collector open)

Collector-emitter sustaining voltage*

Collector-base cutoff current (Emitter open)

Forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

*. VCEO(SUS) Test circuit

Transistors

Product specification

2SD1611

Symbol

VEBO

VCEO(SUS)

ICBO

hFE

VCE(sat)

VBE(sat)

fT

Testconditons

IE = 0.1 A, IC = 0

IC = 2 A, L = 10 mH

VCB = 350 V, IE = 0

VCE = 2 V, IC = 2 A

IC = 3 A, IB = 0.06 A

IC = 3 A, IB = 0.06 A

VCE = 10 V, IC = 1 A, f = 1 MHz

Min Typ Max Unit

5

V

400

V

100 ìA

500

1.5 V

2.5 V

15

MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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