2SD1638 데이터 시트보기 (PDF) - Quanzhou Jinmei Electronic

부품명

상세내역

제조사

2SD1638

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

Product Specification

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO

Collector-emitter breakdown voltage IC=25mA; IB=0

VCEsat Collector-emitter saturation voltage IC=1.0A ;IB=1mA

VBEsat Base-emitter saturation voltage

IC=1.0A ;IB=1mA

ICEO

Collector cut-off current

VCE=100V; IB=0

ICBO

Collector cut-off current

VCB=100V; IE=0

IEBO

Emitter cut-off current

VEB=5V; IC=0

hFE

DC current gain

IC=1A ; VCE=2V

COB

Collector output capacitance

f=0.1MHz ; VCB=10V

www.jmnic.com

2SD1638

MIN TYP. MAX UNIT

100

V

1.5

V

2.0

V

0.5

mA

10

μA

3

mA

1000

10000

25

pF

JMnic

Share Link: