2SD2148 데이터 시트보기 (PDF) - Inchange Semiconductor
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2SD2148 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=5mA , IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA , IC=0
VCE(sat) Collector-emitter saturation voltage IC=7A ;IB=1.4A
VBE(sat) Base-emitter saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
IC=7A ;IB=1.4A
VCB=800V; IE=0
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=7A ; VCE=5V
Product Specification
2SD2148
MIN TYP. MAX UNIT
700
V
5
V
5.0
V
1.5
V
10
μA
10
μA
8
4
2
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