D600 데이터 시트보기 (PDF) - Inchange Semiconductor
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D600 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD600 2SD600K
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB631/631K
·High breakdown voltage VCEO100/120V
·High current 1A
·Low saturation voltage
APPLICATIONS
·For low-frequency power amplifier
applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD600
2SD600K
Open emitter
VCEO
Collector-emitter voltage
2SD600
2SD600K
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current (DC)
ICM
Collector current-peak
PD
Total power dissipation
Ta=25℃
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
VALUE
100
120
100
120
5
1
2
1
8
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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