B2S 데이터 시트보기 (PDF) - Vishay Semiconductors
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B2S Datasheet PDF : 4 Pages
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B2S, B4S & B6S
Vishay General Semiconductor
New Product
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B2S
B4S
Typical thermal resistance (1)
RθJA
90
RθJL
40
Note:
(1) On glass epoxy P.C.B. mounted on 0.05 x 0.05" (1.3 x 1.3 mm) pads
B6S
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE
B2S-E3/80
0.22
80
BASE QUANTITY
3000
DELIVERY MODE
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
0.8
0.7
0.6
0.5
0.4 Glass
Epoxy
0.3 P.C.B.
0.2
0.1
0
0
Resistive or Inductive Load
20 40 60 80
100 120 140 160
Ambient Temperature (°C)
Figure 1. Derating Curve for Output Rectified Current
35
30
25
20
f = 50 Hz
15
10
5
1.0 Cycle
0
1
10
100
Number of Cycles
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
10
TJ = 150 °C
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Voltage Characteristics Per Diode
1000
100
10
TJ = 150 °C
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 88893
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 01-Feb-08
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