BAS16VV(2014) 데이터 시트보기 (PDF) - NXP Semiconductors.

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BAS16VV
(Rev.:2014)

High-speed switching diodes

NXP Semiconductors. 

Nexperia

BAS16 series

High-speed switching diodes

7. Characteristics

Table 8. Characteristics

Tamb = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Per diode

VF

forward voltage

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

IR

reverse current

VR = 25 V

VR = 80 V

VR = 25 V; Tj = 150 C

VR = 80 V; Tj = 150 C

Cd

diode capacitance

f = 1 MHz; VR = 0 V

BAS16; BAS16H;

BAS16J; BAS16L;

BAS16T; BAS16VV;

BAS16VY; BAS16W;

BAS316

BAS516

trr

reverse recovery time IF = 10 mA; IR = 10 mA;

RL = 100 ;

IR(meas) = 1 mA

VFR

forward recovery voltage IF = 10 mA; tr = 20 ns

[1] Pulse test: tp  300 s;   0.02.

Min Typ Max Unit

[1]

-

-

715 mV

-

-

855 mV

-

-

1

V

-

-

1.25 V

-

-

30 nA

-

-

0.5 A

-

-

30 A

-

-

50 A

-

-

1.5 pF

-

-

1

pF

-

-

4

ns

-

-

1.75 V

BAS16_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 6 — 24 September 2014

© Nexperia B.V. 2017. All rights reserved

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