BAV99LT1 데이터 시트보기 (PDF) - Motorola => Freescale

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BAV99LT1

Dual Series Switching Diode

Motorola => Freescale 

BAV99LT1

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) (EACH DIODE)

Characteristic

Symbol Min

OFF CHARACTERISTICS

Reverse Breakdown Voltage (I(BR) = 100 µA)

V(BR)

70

Reverse Voltage Leakage Current (VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

IR

—

—

—

Diode Capacitance

(VR = 0, f = 1.0 MHz)

CD

—

Forward Voltage (IF = 1.0 mAdc)

VF

—

(IF = 10 mAdc)

—

(IF = 50 mAdc)

—

(IF = 150 mAdc)

—

W Reverse Recovery Time (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) (Figure 1) RL = 100

trr

—

Forward Recovery Voltage (IF = 10 mA, tr = 20 ns)

VFR

—

Max

Unit

—

2.5

30

50

1.5

715

855

1000

1250

6.0

1.75

Vdc

mAdc

pF

mVdc

ns

V

820 Ω

+10 V

2k

100 µH IF

0.1 µF

0.1 µF

tr

tp

t

IF

10%

trr

t

50 Ω OUTPUT

PULSE

GENERATOR

DUT

50 Ω INPUT

90%

SAMPLING

OSCILLOSCOPE

VR

INPUT SIGNAL

iR(REC) = 1 mA

IR

OUTPUT PULSE

(IF = IR = 10 mA; measured

at iR(REC) = 1 mA)

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

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