BGD802 데이터 시트보기 (PDF) - NXP Semiconductors.
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BGD802 Datasheet PDF : 10 Pages
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NXP Semiconductors
860 MHz, 18.5 dB gain power doubler amplifier
Product specification
BGD802
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN
DESCRIPTION
1
input
2, 3
common
5
+VB
7, 8
common
9
output
APPLICATIONS
• CATV systems operating in the 40 to 860 MHz
frequency range.
123 5 789
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
Side view
msa319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Gp
power gain
Itot
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 860 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System
(IEC 60134).
SYMBOL
PARAMETER
VB
supply voltage
Vi
RF input voltage
Tstg
storage temperature
Tmb
operating mounting base temperature
MIN.
18
18.5
−
MAX.
19
−
410
UNIT
dB
dB
mA
MIN.
−
−
−40
−20
MAX.
25
65
+100
+100
UNIT
V
dBmV
°C
°C
2002 Jan 23
2
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