NXP Semiconductors
NPN high-voltage transistors
Product data sheet
BSP19; BSP20
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 350 V).
APPLICATIONS
• Switching and amplification
• Especially used in telephony and automotive
applications.
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
4
2, 4
1
3
1
2
3
Top view
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Tstg
Tj
Tamb
PARAMETER
collector-base voltage
BSP19
BSP20
collector-emitter voltage
BSP19
BSP20
emitter-base voltage
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
MIN. MAX. UNIT
−
400
V
−
300
V
−
350
V
−
250
V
−
5
V
−
100
mA
−
100
mA
−
1.2
W
−65
+150 °C
−
150
°C
−65
+150 °C
Note
1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
1999 Jun 01
2