BUZ60 데이터 시트보기 (PDF) - Infineon Technologies
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BUZ60 Datasheet PDF : 9 Pages
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BUZ 60
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
13
Ptot = 75W
A
11
l
kj i h g f
ID
10
9
8
7
6
5
4
3
2
1
0
0
4
8
12
VGS [V]
e a 4.0
b 4.5
c 5.0
d 5.5
e 6.0
df
6.5
g 7.0
h 7.5
i
8.0
cj
9.0
k 10.0
l 20.0
b
a
16 V 22
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
10
A
ID
8
7
6
5
4
3
2
1
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
3.2
a
b
c
d
Ω
RDS (on)
2.4
2.0
1.6
1.2
e
f
0.8
g
ij
h
k
0.4 VGS [V] =
abcdef ghi j k
4.05 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
0.0
0
2
4
6
8
A
12
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
8.0
S
gfs
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0123456A8
ID
Semiconductor Group
6
07/96
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